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PD57060S-E STMicroelectronics
RF Power Transistor
MFG Part Number: PD57060S-E
The PD57060-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power MOSFET. It is designed for high gain, broad band commercial and industrial applications. It operates at 28V in common source mode at frequencies of up to 1GHz. PD57060-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD57060-E’s superior linearity performance makes it an ideal solution for base station applications. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Key AttributesValue
Frequency Range : Minimum Frequency150 MHz
Frequency Range : Maximum Frequency1000 MHz
P1dB60 W
Gain14.3 dB
Pout60 W
Test signalCW
Efficiency54 %
Supply Voltage28 VDC
Thermal Resistance1 °C/W
Package NamePowerSO-10RF straight
Package Type
Request Quote for Lead Time
QuantityUnit Price
1 - 9
10 - 49
50 - 99
100 - 249
250 - 499
500 - 999

This product is available in the following countries:
  • Global