APT13GP120BDQ1G Microsemi Power IGBT Transistor- Richardson RFPD

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APT13GP120BDQ1G Microsemi
Power IGBT Transistor

MFG Part Number: APT13GP120BDQ1G

IsROHSCompliant

The Power MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.

Download Specification Sheet (PDF)

Key Attributes	Value
Configuration	IGBT + Diode
Voltage	1200 V
Current	41 A
Package Type	TO-247

Availability
Request Quote for Lead Time
Manufacturer Stock
1953
Quantity	Unit Price
72 - 99	$5.23
100 - 249	$5.04
250+	Get Quote

Quantity:

This product is available in the following countries:

Global

Availability
Request Quote for Lead Time
Manufacturer Stock
1953
Quantity	Unit Price
72 - 99	$5.23
100 - 249	$5.04
250+	Get Quote

Quantity:

This product is available in the following countries:

Global

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