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MRFG35010ANT1 Freescale Semiconductor
RF Power Transistor
  
Gallium Arsenide PHEMT RF Power Field Effect Transistor. Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
 
Key AttributesValue
TechnologyGaAs
Frequency Range : Minimum Frequency0 MHz
Frequency Range : Maximum Frequency6000 MHz
P1dB9 W
Gain10 dB
Pout1 W
Test signalW-CDMA
Efficiency25 %
Supply Voltage12 VDC
Thermal Resistance6.5 °C/W
Package NameCase 466
Package Type
Availability
995
QuantityUnit Price
1 - 9
$22.58
10 - 24
$21.89
25+$21.25
Quantity:


This product is available in the following countries:
  • Global
   
FREESCALE SEMICONDUCTOR