DESIGN RESOURCE CENTER

  
Welcome! Please Log In
passwords are case sensitive
Forgot password?
Need an account?
Log In
MRF6P24190HR6 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF6P24190HR6
  
Enlarge Photo
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. Designed primarily for large - signal output applications at 2450 MHz. Device is suitable for use in industrial, medical and scientific applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2450 MHz
Frequency Range : Maximum Frequency2450 MHz
P1dB190 W
P3dB
Gain13.2 dB
Pout190 W
Test signalCW
Efficiency46.2 %
Supply Voltage28 VDC
Thermal Resistance0.22 °C/W
Package NameNI-1230
Package Type
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 9
$175.10
10 - 24
$166.46
25 - 149
$158.62
150+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS