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MRF5S9080NBR1 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF5S9080NBR1
  
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RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for GSM and GSM EDGE base station applications with frequencies from 869 to 960 MHz. Suitable for TDMA, CDMA, and multicarrier amplifier applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency869 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB80 W
P3dB
Gain18 dB
Pout80 W
Test signalCW
Efficiency59 %
Supply Voltage26 VDC
Thermal Resistance0.5 °C/W
Package NameTO-272
Package Type
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 9
$37.60
10 - 24
$35.74
25 - 499
$34.06
500+Get Quote
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS