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MRF1535FNT1 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF1535FNT1
  
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for broadband commercial and industrial applications with frequencies to 520 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common source amplifier applications in 12.5 volt mobile FM equipment.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency400 MHz
Frequency Range : Maximum Frequency520 MHz
P1dB35 W
P3dB
Gain13.5 dB
Pout35 W
Test signalCW
Efficiency55 %
Supply Voltage12.5 VDC
Thermal Resistance0.9 °C/W
Package NameTO-272
Package Type
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 9
$14.75
10 - 24
$14.02
25 - 499
$13.36
500+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS