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APT25GN120B2DQX Microsemi
Power IGBT Transistor
MFG Part Number: APT25GN120B2DQ2G
  
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.
 
Key AttributesValue
ConfigurationIGBT + Diode
Voltage1200 V
Current67 A
Package TypeT-Max™
Availability
Request Quote for Lead Time
QuantityUnit Price
23 - 49
$6.81
50 - 99
$6.54
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
MICROSEMI