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MRFE6S9125NBR1 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRFE6S9125NBR1
  
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RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large-signal, common-source amplifier applications in 28 volt base station equipment.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency800 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB125 W
P3dB
Gain20.2 dB
Pout27 W
Test signalCDMA
Efficiency31 %
Supply Voltage28 VDC
Thermal Resistance0.44 °C/W
Package NameTO-272
Package Type
Availability
1
QuantityUnit Price
1 - 9
$42.14
10 - 24
$40.06
25 - 499
$38.18
500+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS