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APT35GN120L2DQX Microsemi
Power IGBT Transistor
MFG Part Number: APT35GN120L2DQ2G
Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT's have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance ensures ultra-reliable operation. Low gate charge simplifies gate drive design and minimizes losses.
Key AttributesValue
ConfigurationIGBT + Diode
Voltage1200 V
Current94 A
Package TypeTO-264
Request Quote for Lead Time
QuantityUnit Price
52 - 99
100 - 249
250+Get Quote

This product is available in the following countries:
  • Global