DESIGN RESOURCE CENTER

  
Welcome! Please Log In
passwords are case sensitive
Forgot password?
Need an account?
Log In
MRFE6S9045NR1 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRFE6S9045NR1
  
Enlarge Photo
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common-source amplifier applications in 28 volt base station equipment.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency880 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB45 W
P3dB
Gain22.1 dB
Pout10 W
Test signalCDMA
Efficiency32 %
Supply Voltage28 VDC
Thermal Resistance1 °C/W
Package NameTO-270
Package Type
Availability
86
QuantityUnit Price
1 - 9
$24.44
10 - 24
$21.91
25 - 99
$21.19
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS