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MRFE6S9045NR1 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRFE6S9045NR1
  
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RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of this device makes it ideal for large- signal, common-source amplifier applications in 28 volt base station equipment.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency880 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB45 W
P3dB
Gain22.1 dB
Pout10 W
Test signalCDMA
Efficiency32 %
Supply Voltage28 VDC
Thermal Resistance1 °C/W
Package NameTO-270
Package Type
Availability
325
Manufacturer Stock
10500
QuantityUnit Price
1 - 9
$19.65
10 - 24
$18.68
25 - 499
$17.80
500+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS