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RF Small Signal Transistor Bipolar/HBT
MFG Part Number: AT-32063-BLKG
The AT-32063 contains two high performance NPN bipolar transistors in a single SOT-363 package. The devices are unconnected, allowing flexibility in design. The pin-out is convenient for cascode amplifier designs. The SOT-363 package is an industry standard plastic surface mount package. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of the transistor yields extremely high performance products that can perform a multiplicity of tasks. The 20 emitter finger interdigitated geometry yields a transistor that is easy to match to and extremely fast, with moderate power, low noise resistance, and low operating currents.Optimized performance at 2.7 V makes this device ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscillator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 12 dB or more associated gain at a 2.7 V, 5 mA bias, with noise performance being relatively insensitive to input match. High gain capability at 1 V, 1 mA makes this device a good fit for 900 MHz pager applications. Voltage breakdowns are high enough for use at 5 volts. The AT-3 series bipolar transistors are fabricated using an optimized version of 10  GHz ft , 30 GHz fmax Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metallization in the fabrication of these devices.
Key AttributesValue
Frequency Range : Minimum Frequency100 MHz
Frequency Range : Maximum Frequency2400 MHz
Gain14.5 dB
Noise Figure1.1 dB
P1dB12 dBm
Output IP324 dBm
Vd (Device Voltage)2.7 VDC
Thermal Resistance370 °C/W
Package TypeSOT-363
QuantityUnit Price

This product is available in the following countries:
  • Europe
  • North America
  • South America
  • Southeast Asia
  • Japan