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RF Small Signal Transistor Bipolar/HBT
MFG Part Number: AT-30533-BLKG
AT-30533 are high performance NPN bipolar transistors that have been optimized for maximum fT at low voltage operation, making them ideal for use in battery powered applications in wireless markets. The AT-30533 uses the 3 lead SOT--23. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The 3.2 micron emitter-to-emitter pitch and reduced parasitic design of these transistors yields extremely high performance products that can perform a multiplicity of tasks. The 5 emitter finger interdigitated geometry yields an extremely fast transistor with high gain and low operating currents.Optimized performance at 2.7 V makes these devices ideal for use in 900 MHz, 1.8 GHz, and 2.4 GHz battery operated systems as an LNA, gain stage, buffer, oscilllaator, or active mixer. Typical amplifier designs at 900 MHz yield 1.3 dB noise figures with 13 dB or more associated gain at a 2.7 V, 1 mA bias. Voltage breakkdowns are high enough for use at 5 volts. High gain capability at 1 V, 1 mA makes these devices a good fit for 900  MHz pager appliications. The AT-3 series bipolar trannsistors are fabricated using an optimized version of 10  GHz fT, 30  GHz fMAX Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices.
Key AttributesValue
Frequency Range : Minimum Frequency100 MHz
Frequency Range : Maximum Frequency3000 MHz
Gain13 dB
Noise Figure1.1 dB
P1dB7 dBm
Output IP317 dBm
Vd (Device Voltage)2.7 VDC
Thermal Resistance550 °C/W
Package TypeSOT-23
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This product is available in the following countries:
  • Europe
  • North America
  • South America
  • Southeast Asia
  • Japan