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AT-41511-BLKG
RF Small Signal Transistor Bipolar/HBT
    
AT-41511 are general purpose NPN bipolar transistors that offer excellent high frequency performance at an economical price. The AT-41511 places the same die in the lower parasitic 4 lead SOT--143. Both packages are industry standard, and compatible with high volume surface mount assembly techniques. The 4 micron emitter-to-emitter pitch of these transistors yields high performance products that can perform a multiplicity of tasks. The 14 emitter finger interdigitated geometry yields an intermediate-sized transistor with easy to match to impedances, low noise figure, and moderate power.Optimized for best performace from a 5 to 8 volt bias supply, these transistors are also good performers at 2.7 V. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, or active mixer. An optimum noise match near 50  ohms at 900 MHz makes these devices particularly easy to use as LNAs. Typical amplifier designs at 900 MHz yield 1 dB noise figures with 15 dB or more associated gain at a 5 V, 5 mA bias, with good gain and noise figure obtainable at biases as low as 2 mA. The AT-415 series bipolar transistors are fabricated using 10 GHz fT Self-Aligned-Transistor (SAT) process. The die are nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ion-implantation, self-alignment techniques, and gold metalization in the fabrication of these devices.
 
Key AttributesValue
Frequency Range : Minimum Frequency100 MHz
Frequency Range : Maximum Frequency3000 MHz
Gain15.5 dB
Noise Figure1 dB
P1dB14.5 dBm
Output IP325 dBm
Vd (Device Voltage)2.7 VDC
Thermal Resistance550 °C/W
Package TypeSOT-143
Availability
338
QuantityUnit Price
1+$0.16
Quantity:


This product is available in the following countries:
  • Europe
  • North America
  • South America
  • Southeast Asia
  • Japan