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MRFE6S9160HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRFE6S9160HSR3
  
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for N -CDMA, GSM and GSM EDGE base station applications with frequencies from 865 to 960 MHz. Suitable for multicarrier amplifier applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency880 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB160 W
P3dB
Gain21 dB
Pout35 W
Test signalCDMA
Efficiency31 %
Supply Voltage28 VDC
Thermal Resistance0.31 °C/W
Package NameNI-780
Package Type
Availability
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QuantityUnit Price
1 - 9
$81.21
10 - 24
$77.20
25 - 249
$73.56
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS