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APT150GN60LDQ4G Microsemi
Power IGBT Transistor
  
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
 
Key AttributesValue
ConfigurationIGBT + Diode
Voltage600 V
Current220 A
Package TypeTO-264
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This product is available in the following countries:
  • Global
   
MICROSEMI