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APT36GA60B Microsemi
Power IGBT Transistor
MFG Part Number: APT36GA60B
  
Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
 
Key AttributesValue
ConfigurationSingle
Voltage600 V
Current65 A
Package TypeTO-247
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This product is available in the following countries:
  • Global
   
MICROSEMI