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APT102GA60L Microsemi
Power IGBT Transistor
MFG Part Number: APT102GA60L
  
Power MOS 8® is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved through leading technology silicon design and lifetime control processes. A reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, resulting in low EMI, even when switching at high frequency.
 
Key AttributesValue
ConfigurationSingle
Voltage600 V
Current183 A
Package TypeTO-264
Availability
50
QuantityUnit Price
1 - 49
$10.75
50 - 99
$10.33
100 - 249
$9.93
250 - 499
$9.69
500+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
MICROSEMI