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NE5520279A-A Renesas
RF Power Transistor
MFG Part Number: NE5520279A-A
    

The NE5520279A is an N-channel silicon power laterally diffused MOS FET specially designed as the transmission power amplifier for 3.2 V DCS1800 handsets. Dies are manufactured using our NEWMOS2 technology (our WSi gate laterally diffused MOS FET) and housed in a surface mount package. This device can deliver 32.0 dBm output power with 45% power added efficiency at 1.8 GHz under the 3.2 V supply voltage.

 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency
Frequency Range : Maximum Frequency
P1dB
P3dB
Gain10 dB
Pout1.6 W
Test signalCW
Efficiency45 %
Supply Voltage3.2 VDC
Thermal Resistance8 °C/W
Package Name79A
Package Type
Availability
25
QuantityUnit Price
1+$3.06
Quantity:


This product is available in the following countries:
  • Europe

   
RENESAS