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MRFE6P3300HR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRFE6P3300HR3
  
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of this device make it ideal for large - signal, common- source amplifier applications in 32 volt analog or digital television transmitter equipment.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency470 MHz
Frequency Range : Maximum Frequency860 MHz
P1dB300 W
P3dB
Gain20.4 dB
Pout270 W
Test signal2-Tone
Efficiency44.8 %
Supply Voltage32 VDC
Thermal Resistance0.23 °C/W
Package NameNI-860
Package Type
Availability
105
QuantityUnit Price
1 - 9
$213.56
10 - 24
$203.01
25 - 249
$193.46
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS