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MRF5P21045NR1 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF5P21045NR1
  
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RF Power Field-Effect Transistor. N-Channel Enhancement-Mode Lateral MOSFET. Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. Dual path topology suitable for Doherty, quadrature, single-ended and push-pull applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2110 MHz
Frequency Range : Maximum Frequency2170 MHz
P1dB45 W
P3dB
Gain14.5 dB
Pout10 W
Test signalW-CDMA
Efficiency25.5 %
Supply Voltage28 VDC
Thermal Resistance1.35 °C/W
Package NameTO-270
Package Type
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NXP SEMICONDUCTORS