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MRFG35003N6AT1 Freescale Semiconductor
RF Power Transistor
  
Gallium Arsenide PHEMT RF Power Field Effect Transistor. Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB Customer Premise Equipment (CPE) applications.
 
Key AttributesValue
TechnologyGaAs
Frequency Range : Minimum Frequency0 MHz
Frequency Range : Maximum Frequency6000 MHz
P1dB3 W
P3dB
Gain10 dB
Pout0.45 W
Test signalW-CDMA
Efficiency27 %
Supply Voltage6 VDC
Thermal Resistance5.9 °C/W
Package NameCase 466
Package Type
Availability
2
QuantityUnit Price
1 - 9
$8.00
10 - 24
$7.60
25 - 999
$7.25
1000+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
FREESCALE SEMICONDUCTOR