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MRF7S27130HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF7S27130HSR3
  
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for WiMAX base station applications with frequencies up to 2700 MHz. Suitable for WiMAX, WiBro, BWA, and OFDM multicarrier Class AB and Class C amplifier applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2500 MHz
Frequency Range : Maximum Frequency2700 MHz
P1dB130 W
P3dB
Gain16.5 dB
Pout23 W
Test signalCW
Efficiency20 %
Supply Voltage28 VDC
Thermal Resistance0.32 °C/W
Package NameNI-780
Package Type
Availability
174
Manufacturer Stock
250
QuantityUnit Price
1 - 9
$111.34
10 - 24
$105.84
25 - 249
$100.86
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS