MRF7S21080HSR3 NXP Semiconductors RF Power Transistor- Richardson RFPD


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MRF7S21080HSR3 NXP Semiconductors
RF Power Transistor

MFG Part Number: MRF7S21080HSR3

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS/cellular radio applications.

Download Specification Sheet (PDF)