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MRF7S21080HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF7S21080HSR3
  
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS/cellular radio applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2110 MHz
Frequency Range : Maximum Frequency2170 MHz
P1dB80 W
P3dB
Gain18 dB
Pout22 W
Test signalW-CDMA
Efficiency32 %
Supply Voltage28 VDC
Thermal Resistance0.6 °C/W
Package NameNI-780
Package Type
Availability
227
QuantityUnit Price
1 - 9
$47.77
10 - 24
$45.41
25 - 249
$43.27
250+Get Quote
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS