| MFG Part Number: MRF7S21080HSR3 |
| RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS/cellular radio applications. |
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| Download Specification Sheet (PDF) | |
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| Key Attributes | Value |
| Technology | LDMOS |
| Frequency Range : Minimum Frequency | 2110 MHz |
| Frequency Range : Maximum Frequency | 2170 MHz |
| P1dB | 80 W |
| P3dB | |
| Gain | 18 dB |
| Pout | 22 W |
| Test signal | W-CDMA |
| Efficiency | 32 % |
| Supply Voltage | 28 VDC |
| Thermal Resistance | 0.6 °C/W |
| Package Name | NI-780 |
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| Availability |
| 7 |
| Quantity | Unit Price |
1 - 9
| $62.25 |
10 - 24
| $59.94 |
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| This product is available in the following countries: |
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