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MRF7S21080HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF7S21080HSR3
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for TD-SCDMA and PCN-PCS/cellular radio applications.
 
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250+$53.11
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NXP SEMICONDUCTORS