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MRF7S21150HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF7S21150HSR3
  
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cel lular radi o and WLL applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency2110 MHz
Frequency Range : Maximum Frequency2170 MHz
P1dB150 W
P3dB
Gain17.5 dB
Pout44 W
Test signalW-CDMA
Efficiency31 %
Supply Voltage28 VDC
Thermal Resistance0.33 °C/W
Package NameNI-780
Package Type
Availability
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QuantityUnit Price
1 - 9
$90.64
10 - 24
$86.16
25 - 249
$82.11
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This product is available in the following countries:
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NXP SEMICONDUCTORS