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MRFE6S9135HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRFE6S9135HSR3
    
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for broadband commercial and industrial applications with frequencies up to 1000 MHz. The high gain and broadband performance of these devices make them ideal for large - signal, common- source amplifier applications in 28 volt base station equipment.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency940 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB135 W
P3dB
Gain21 dB
Pout39 W
Test signalW-CDMA
Efficiency32.3 %
Supply Voltage28 VDC
Thermal Resistance0.39 °C/W
Package NameNI-880
Package Type
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This product is available in the following countries:
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NXP SEMICONDUCTORS