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MRF6VP21KHR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF6VP21KHR5
  
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Designed primarily for pulsed wideband applications with frequencies up to 235 MHz. Device is unmatched and is suitable for use in industrial, medical and scientific applications. Typical Pulsed Performance at 225 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%, Power Gain = 24 dB, Drain Efficiency = 67.5%. Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 1000 Watts Peak Power. Designed for Push-Pull Operation.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency10 MHz
Frequency Range : Maximum Frequency235 MHz
P1dB1000 W
P3dB
Gain24 dB
Pout1000 W
Test signalPulsed
Efficiency67.5 %
Supply Voltage50 VDC
Thermal Resistance0.03 °C/W
Package NameNI-1230
Package Type
Availability
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Manufacturer Stock
200
QuantityUnit Price
1 - 9
$489.14
10 - 24
$464.99
25 - 49
$443.11
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS