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MRF6VP41KHR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF6VP41KHR5
Designed primarily for pulsed wideband applications with frequencies up to 500 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical Pulsed Performance at 450 MHz: VDD = 50 Volts, IDQ = 150 mA, Pout = 1000 Watts Peak (200 W Avg.), Pulse Width = 100 µsec, Duty Cycle = 20%, Power Gain = 20 dB, Drain Efficiency = 64%. Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 1000 Watts Peak Power. Designed for Push-Pull Operation.
 
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50+$842.52
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NXP SEMICONDUCTORS