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MRF6VP2600HR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF6VP2600HR5
  
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Designed primarily for wideband applications with frequencies up to 250 MHz. Device is unmatched and is suitable for use in broadcast applications. Typical DVB-T OFDM Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 125 Watts Avg., f = 225 MHz, Channel Bandwidth = 7.61 MHz, Input Signal PAR = 9.3 dB @ 0.01% Probability on CCDF. Power Gain = 25 dB; Drain Efficiency = 28.5%; ACPR @ 4 MHz Offset = -61 dBc @ 4 kHz Bandwidth. Typical Pulsed Performance: VDD = 50 Volts, IDQ = 2600 mA, Pout = 600 Watts Peak, f = 225 MHz, Pulse Width = 100 µsec, Duty Cycle = 20%; Power Gain = 25.3 dB; Drain Efficiency = 59%. Capable of Handling 10:1 VSWR, @ 50 Vdc, 225 MHz, 600 Watts Peak Power, Pulse Width = 100 µsec, Duty Cycle = 20%. Designed for Push-Pull Operation.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency10 MHz
Frequency Range : Maximum Frequency250 MHz
P1dB600 W
P3dB
Gain25 dB
Pout600 W
Test signalCW
Efficiency28.5 %
Supply Voltage50 VDC
Thermal Resistance0.2 °C/W
Package NameNI-1230
Package Type
Availability
154
Manufacturer Stock
400
QuantityUnit Price
1 - 9
$184.27
10 - 24
$175.17
25 - 49
$166.93
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS