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MD7P19130HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MD7P19130HSR3
  
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cel lular radi o and WLL applications.
 
Key AttributesValue
TechnologyMOSFET
Frequency Range : Minimum Frequency1930 MHz
Frequency Range : Maximum Frequency1990 MHz
P1dB
P3dB
Gain20 dB
Pout
Test signal
Efficiency30 %
Supply Voltage28 VDC
Thermal Resistance
Package NameNI-780S-4
Package Type
Availability
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS