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PD85035S-E STMicroelectronics
RF Power Transistor
MFG Part Number: PD85035S-E
The PD85035S-E is a common source N-channel, enhancement-mode lateral field-effect RF power transistor. PD85035S-E is designed for high gain, broadband commercial and industrial applications. PD85035S-E operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD85035-E boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD85035-E’s superior linearity performance makes PD85035S-E an ideal solution for mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Key AttributesValue
Frequency Range : Minimum Frequency50 MHz
Frequency Range : Maximum Frequency1000 MHz
P1dB35 W
Gain14.9 dB
Pout35 W
Test signalCW
Efficiency58 %
Supply Voltage12.5 VDC
Thermal Resistance1 °C/W
Package NamePowerSO-10RF straight
Package Type
Request Quote for Lead Time
QuantityUnit Price
1 - 9
10 - 49
50 - 99
100 - 249
250 - 499
500 - 999

This product is available in the following countries:
  • Global