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APT30GP60B2DLG Microsemi
Power IGBT Transistor
MFG Part Number: APT30GP60B2DLG
  
The Power MOS 7® IGBT used in this resonant mode combi is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switch mode power supplies.
 
Key AttributesValue
ConfigurationIGBT + Diode
Voltage600 V
Current30 A
Package TypeT-Max™
Availability
Request Quote for Lead Time
QuantityUnit Price
56 - 99
$6.74
100 - 249
$6.48
250 - 499
$6.32
500+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
MICROSEMI