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MRF6V2150NBR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF6V2150NBR5
  
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RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed primarily for CW large-signal output and driver applications with frequencies up to 450 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency10 MHz
Frequency Range : Maximum Frequency450 MHz
P1dB150 W
P3dB
Gain25 dB
Pout150 W
Test signalCW
Efficiency68.3 %
Supply Voltage50 VDC
Thermal Resistance0.24 °C/W
Package NameTO-272
Package Type
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 9
$47.22
10 - 24
$44.89
25 - 49
$42.78
50+Get Quote
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS