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MRF7S35015HSR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF7S35015HSR3
  
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. Designed for pulsed wideband applications operating at frequencies between 3100 and 3500 MHz.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency3100 MHz
Frequency Range : Maximum Frequency3500 MHz
P1dB15 W
P3dB
Gain16 dB
Pout15 W
Test signalPulsed
Efficiency41 %
Supply Voltage32 VDC
Thermal Resistance0.6 °C/W
Package NameNI-400
Package Type
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS