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MRF6V10010NR4 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF6V10010NR4
  
RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET. RF Power transistor designed for applications operating at frequencies between 960 and 1400 MHz, 1% to 20% duty cycle. This device is suitable for use in pulsed applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency960 MHz
Frequency Range : Maximum Frequency1400 MHz
P1dB10 W
P3dB
Gain25 dB
Pout10 W
Test signalPulsed
Efficiency69 %
Supply Voltage50 VDC
Thermal Resistance1.6 °C/W
Package NamePLD
Package Type
Availability
32
QuantityUnit Price
1 - 9
$51.82
10 - 24
$49.26
25 - 99
$46.94
100+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS