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MRF6V4300NR1 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF6V4300NR1
  
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Designed primarily for CW large--signal output and driver applications with frequencies up to 600 MHz. Devices are unmatched and are suitable for use in industrial, medical and scientific applications. Typical CW Performance: VDD = 50 Volts, IDQ = 900 mA, Pout = 300 Watts, f = 450 MHz, Power Gain — 22 dB, Drain Efficiency — 60%. Capable of Handling 10:1 VSWR, @ 50 Vdc, 450 MHz, 300 Watts CW Output Power.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency10 MHz
Frequency Range : Maximum Frequency600 MHz
P1dB300 W
P3dB
Gain22 dB
Pout300 W
Test signalCW
Efficiency60 %
Supply Voltage50 VDC
Thermal Resistance0.24 °C/W
Package NameTO-270
Package Type
Availability
Request Quote for Lead Time
Manufacturer Stock
500
QuantityUnit Price
1 - 9
$68.38
10 - 24
$65.00
25 - 499
$61.94
500+Get Quote
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS