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MRF6V14300HR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF6V14300HR3
  
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RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs. RF Power transistors designed for applications operating at frequencies between 1200 and 1400 MHz, 1% to 12% duty cycle. These devices are suitable for use in pulsed applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1200 MHz
Frequency Range : Maximum Frequency1400 MHz
P1dB330 W
P3dB
Gain18 dB
Pout330 W
Test signalPulsed
Efficiency60.5 %
Supply Voltage50 VDC
Thermal Resistance0.13 °C/W
Package NameNI-780
Package Type
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS