| Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5–35.5 GHz. |
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| Download Specification Sheet (PDF) | |
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| Key Attributes | Value |
| Frequency Range : Minimum Frequency | 9500 MHz |
| Frequency Range : Maximum Frequency | 35500 MHz |
| CW Output | 20 mW |
| Vd (Device Voltage) | 8 VDC |
| Id (Device Current) | 140 mA |
| Thermal Resistance | |
| Package Type | M11 |
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| Availability |
| 150 |
| Quantity | Unit Price |
| Quote Required |
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| This product is available in the following countries: |
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