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MG1052-30 Microsemi
RF Gunn Diode
MFG Part Number: MG1052-30
Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5–35.5 GHz.
Key AttributesValue
Frequency Range : Minimum Frequency9500 MHz
Frequency Range : Maximum Frequency35500 MHz
CW Output20 mW
Vd (Device Voltage)8 VDC
Id (Device Current)140 mA
Thermal Resistance
Package TypeM11
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This product is available in the following countries:
  • Global