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MRF8S9200NR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S9200NR3
  
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RF Power Field Effect Transistor. N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency920 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB200 W
P3dB
Gain19.9 dB
Pout58 W
Test signalCDMA
Efficiency37.1 %
Supply Voltage28 VDC
Thermal Resistance0.3 °C/W
Package NameOM-780-2
Package Type
Availability
2367
Manufacturer Stock
19250
QuantityUnit Price
1 - 9
$81.23
10 - 24
$77.22
25 - 249
$73.59
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS