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MRFE6S8046GNR1 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRFE6S8046GNR1
  
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RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for GSM and GSM EDGE base station applications with frequencies from 864 to 894 MHz. Suitable for CDMA and multicarrier amplifier applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency864 MHz
Frequency Range : Maximum Frequency894 MHz
P1dB47 W
P3dB
Gain19.8 dB
Pout35.5 W
Test signalCW
Efficiency57.7 %
Supply Voltage28 VDC
Thermal Resistance1.7 °C/W
Package NameTO-270 WB-4 Gull
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This product is available in the following countries:
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NXP SEMICONDUCTORS