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MRFE6S9046GNR1 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRFE6S9046GNR1
  
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RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for GSM and GSM EDGE base station applications with frequencies from 920 to 960 MHz. Suitable for CDMA and multicarrier amplifier applications.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency920 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB45 W
P3dB
Gain19 dB
Pout35.5 W
Test signalCW
Efficiency57 %
Supply Voltage28 VDC
Thermal Resistance1.3 °C/W
Package NameTO-270 WB-4 Gull
Package Type
Availability
340
Manufacturer Stock
4500
QuantityUnit Price
1 - 9
$20.94
10 - 24
$19.90
25 - 499
$18.96
500+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS