DESIGN RESOURCE CENTER

  
Welcome! Please Log In
passwords are case sensitive
Forgot password?
Need an account?
Log In
MRF8S9260HR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S9260HR3
    
Enlarge Photo
RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA and multicarrier GSM base station applications with frequencies from 865 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency920 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB260 W
P3dB
Gain18.6 dB
Pout75 W
Test signalW-CDMA
Efficiency38.5 %
Supply Voltage28 VDC
Thermal Resistance0.31 °C/W
Package NameNI-880
Package Type
Availability
Request Quote for Lead Time
QuantityUnit Price
1 - 9
$119.77
10+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS