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PD20010STR-E STMicroelectronics
RF Power Transistor
MFG Part Number: PD20010STR-E
RF Power Transistor, LDMOST Plastic Family N-Channel Enhancement-Mode Lateral MOSFETs. The PD20010-E is a common source N-Channel, enhancement-mode lateral Field-Effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates at 13.6 V in common source mode at frequencies of up to 1 GHz. PD20010-E boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD20010-E's superior linearity performance make it an ideal solution for car mobile radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
Key AttributesValue
Frequency Range : Minimum Frequency0 MHz
Frequency Range : Maximum Frequency2000 MHz
P1dB14 W
Gain11 dB
Pout10 W
Test signalCW
Efficiency45 %
Supply Voltage13.6 VDC
Thermal Resistance1.6 °C/W
Package NamePowerSO-10RF straight
Package Type
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QuantityUnit Price
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This product is available in the following countries:
  • Global