| The TriQuint TGF2023-20 is a discrete 20 mm GaN on SiC HEMT which operates from DC-18 GHz. The TGF2023-20 is designed using TriQuint's proven 0.25um GaN production process. This process features advanced field plate techniques to optimize microwave power and Efficiency at high drain bias operating conditions. The TGF2023-20 typically provides > 50 dBm of saturated output power with power gain of 15 dB. The maximum power added Efficiency is 55% which makes the TGF2023-20 appropriate for high Efficiency applications. Lead-free and RoHS compliant |
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| Download Specification Sheet (PDF) | |
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| Key Attributes | Value |
| Frequency Range : Minimum Frequency | 0 MHz |
| Frequency Range : Maximum Frequency | 18000 MHz |
| P1dB | 63.1 W |
| Gain | 15 dB |
| Pout | 63 W |
| Test signal | 3.5 GHz CW |
| Power Added Efficiency | 55 % |
| Supply Voltage | 40 VDC |
| Thermal Resistance | 1 °C/W |
| Package Type | Chip |
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| Availability |
| 4 |
| Quantity | Unit Price |
1 - 24
| $163.80 |
25 - 99
| $147.83 |
| 100+ | Get Quote |
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| This product is available in the following countries: |
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