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MRF8S18120HSR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S18120HSR5
  
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RF Power Field Effect Transistors; N-Channel Enhancement-Mode Lateral MOSFETs. Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1805 MHz
Frequency Range : Maximum Frequency1880 MHz
P1dB120 W
P3dB
Gain18.2 dB
Pout72 W
Test signalCW
Efficiency49.8 %
Supply Voltage28 VDC
Thermal Resistance0.47 °C/W
Package NameNI-780
Package Type
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS