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MRF8S7170NR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S7170NR3
  
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RF Power Field Effect Transistor. N-Channel Enhancement-Mode Lateral MOSFET. Designed for base station applications with frequencies from 728 to 768 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.

 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency618 MHz
Frequency Range : Maximum Frequency803 MHz
P1dB182 W
P3dB
Gain19.5 dB
Pout50 W
Test signalW-CDMA
Efficiency37 %
Supply Voltage28 VDC
Thermal Resistance0.37 °C/W
Package NameOM-780
Package Type
Availability
183
Manufacturer Stock
4500
QuantityUnit Price
1 - 9
$67.43
10 - 24
$64.10
25 - 249
$61.08
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS