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MRF8P9300HSR6 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8P9300HSR6
  
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RF Power Field Effect Transistors. N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA and multicarrier GSM base station applications with frequencies from 860 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency920 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB326 W
P3dB
Gain19.4 dB
Pout100 W
Test signalW-CDMA
Efficiency35.8 %
Supply Voltage28 VDC
Thermal Resistance0.2 °C/W
Package NameNI-1230S
Package Type
Availability
Request Quote for Lead Time
Manufacturer Stock
30900
QuantityUnit Price
1 - 9
$138.19
10 - 24
$131.37
25 - 149
$125.19
150+Get Quote
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS