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MRF8S9170NR3 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8S9170NR3
  
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RF Power Field Effect Transistors; N-Channel Enhancement-Mode Lateral MOSFETs. Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency920 MHz
Frequency Range : Maximum Frequency960 MHz
P1dB177 W
P3dB
Gain19.3 dB
Pout50 W
Test signalW-CDMA
Efficiency36.5 %
Supply Voltage28 VDC
Thermal Resistance0.33 °C/W
Package NameOM-780
Package Type
Availability
24
Manufacturer Stock
5000
QuantityUnit Price
1 - 9
$67.43
10 - 24
$64.10
25 - 249
$61.08
250+Get Quote
Quantity:


This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS