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MRF581T Microsemi
RF Power Transistor
MFG Part Number: MRF581T
    
RF & Microwave Discrete Low Power Transistors. Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. Features:  •  Low Noise - 2.5 dB @ 500 MHz  •  Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz  •  Ftau - 5.0 GHz @ 10v, 75mA  •  Cost Effective MacroX Package
 
Key AttributesValue
TechnologyBipolar/HBT
Frequency Range : Minimum Frequency1 MHz
Frequency Range : Maximum Frequency1000 MHz
P1dB
P3dB
Gain15.5 dB
Pout
Test signalCW
Efficiency
Supply Voltage10 VDC
Thermal Resistance40 °C/W
Package NameMacro X
Package Type
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This product is available in the following countries:
  • Global
   
MICROSEMI