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FP1189TR-G Qorvo
RF Small Signal Transistor HFET
MFG Part Number: 1066922
The FP1189 is a high performance 1/2-Watt HFET (Heterostructure FET) in a low-cost SOT-89 surface- mount package. This device works optimally at a drain bias of +8 V and 125 mA to achieve +40 dBm output IP3 performance and an output power of +27 dBm at 1-dB compression, while providing 20.5 dB gain at 900 MHz. The device conforms to WJ Communications’ long history of producing high reliability and quality components. The FP1189 has an associated MTTF of greater than 100 years at a mounting temperature of 85 °C and is available in both the standard SOT-89 package and the environmentally-friendly lead-free/green/RoHS-compliant and green SOT-89 package. All devices are 100% RF & DC tested. The product is targeted for use as driver amplifiers for wireless infrastructure where high performance and high efficiency are required.
Key AttributesValue
Frequency Range : Minimum Frequency50 MHz
Frequency Range : Maximum Frequency4000 MHz
Gain20.5 dB
Noise Figure2.7 dB
P1dB27 dBm
Output IP340 dBm
Vd (Device Voltage)3 VDC
Idss290 mA
Thermal Resistance50 °C/W
Package TypeSOT-89
QuantityUnit Price
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This product is available in the following countries:
  • Global