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MRF8P20160HSR5 NXP Semiconductors
RF Power Transistor
MFG Part Number: MRF8P20160HSR5
  
RF Power Field Effect Transistor, N-Channel Enhancement-Mode Lateral MOSFET. Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base station modulation formats.
 
Key AttributesValue
TechnologyLDMOS
Frequency Range : Minimum Frequency1880 MHz
Frequency Range : Maximum Frequency2025 MHz
P1dB107 W
P3dB160 W
Gain16.5 dB
Pout37 W
Test signalW-CDMA
Efficiency45.8 %
Supply Voltage28 VDC
Thermal Resistance0.95 °C/W
Package NameNI-780S
Package Type
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This product is available in the following countries:
  • Global
   
NXP SEMICONDUCTORS